Forward-bias conduction of Schottky diodes on polysilicon thin films

Forward-bias conduction of Schottky diodes on polysilicon thin films

An analysis of forward I-V characteristics for Al Schottky contacts to polycrystalline thin films is presented. Experimental results for lateral structures with various n/sup -/ doping levels show the expected twofold exponential characteristics representing a transition from electrode-limited to bu...

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Veröffentlicht in:IEEE transactions on electron devices 1989-07, Vol.36 (7), p.1311-1317
Hauptverfasser: Verghese, S., Hauser, J.R., Wortman, J.J., Kerns, S.E.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Conductivity
Crystallization
Diodes
Doping
Electronics
Exact sciences and technology
Grain boundaries
Schottky barriers
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Testing
Thermionic emission
Transistors
Voltage
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Beschreibung
Zusammenfassung:An analysis of forward I-V characteristics for Al Schottky contacts to polycrystalline thin films is presented. Experimental results for lateral structures with various n/sup -/ doping levels show the expected twofold exponential characteristics representing a transition from electrode-limited to bulk-limited conduction. At higher doping levels the bulk-limited characteristic is not a perfect exponential. The thermionic emission theory has been modified to include crystallite resistivity between grain boundaries and successfully matches experimental data.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.30937