Fluctuating deep level trap occupancy model for bulk 1/f noise in field-effect transistors

A quantitative theoretical model for bulk 1/f noise in semiconductor resistors has been developed. The model uses the fact that random fluctuations of the steady-state deep level trapped electron density at some point in a depletion layer decay exponentially with a time constant which depends on the local free-electron density. The model was used to derive an exact integral expression and a simple approximate analytic expression for the spectral density of bulk 1/f and generation noise in unsaturated field-effect transistors. Excellent agreement with experimental results is obtained. The relationship between bulk 1/f and generation noise spectra is discussed.