Fabrication of variable-thickness bridge using YBCO thin film

In-situ -grown YBCO thin films were prepared on a MgO substrate by rf magnetron sputtering with a dc-biased substrate holder using a stoichiometric Y 1 Ba 2 Cu 3 O y target. The variable-thickness bridges with the bridge length of 80 nm-200 nm were fabricated in these films by means of photolithogra...

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Veröffentlicht in:Japanese Journal of Applied Physics 1991-09, Vol.30 (9A), p.L1556-L1558
Hauptverfasser: CHAN HOON PARK, KOBAYASHI, T, GOTO, T
Format: Artikel
Sprache:eng
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Zusammenfassung:In-situ -grown YBCO thin films were prepared on a MgO substrate by rf magnetron sputtering with a dc-biased substrate holder using a stoichiometric Y 1 Ba 2 Cu 3 O y target. The variable-thickness bridges with the bridge length of 80 nm-200 nm were fabricated in these films by means of photolithography and slant evaporation techniques. The current-voltage characteristics of the bridge in rf radiation show the structure of the rf-induced steps over a wide temperature range.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l1556