Deposition of copper oxide, titanium oxide and indium tin oxide films by reactive magnetron sputtering

Copper, titanium and 90 wt % In-10 wt % Sn targets have been magnetron sputtered in reactive Ar+O 2 atmosphere at different oxygen partial pressures. The dependence of the discharge voltage U (at constant discharge current) on the ratio x between the oxygen partial pressure and the total pressure has been studied. The ranges of x where deposition of Cu, Cu 2O, Cu 2O+CuO, CuO, TiO 2 and ir reflective indium tin oxide (ITO) films takes place have also been distinguished.