D-band subharmonic mixer with silicon planar doped barrier diodes

D-band subharmonic mixer with silicon planar doped barrier diodes

A subharmonically pumped finline mixer applying a silicon planar doped barrier diode has been developed for D-band frequencies. Diode processing and DC characteristics are discussed, and a circuit description is given. Excellent mixing properties (minimum conversion loss) of 10.8 dB) favor this mixe...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1991-02, Vol.39 (2), p.366-368
Hauptverfasser: Guttich, U., Strohm, K.M., Schaffler, F.
Format: Artikel
Sprache:eng
Schlagworte:
Doping
Finline
Gold
Microstrip
Molecular beam epitaxial growth
Ohmic contacts
Radio frequency
Schottky diodes
Silicon
Substrates
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Zusammenfassung:A subharmonically pumped finline mixer applying a silicon planar doped barrier diode has been developed for D-band frequencies. Diode processing and DC characteristics are discussed, and a circuit description is given. Excellent mixing properties (minimum conversion loss) of 10.8 dB) favor this mixer configuration for application in low-cost receivers operating at those RF bands (above 120 GHz) where fundamental low-noise, solid-state oscillators are not currently available.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.102987