Characterization of Gold-Aluminum Nitride and Gold-Silicon Carbide Interfaces

Characterization of Gold-Aluminum Nitride and Gold-Silicon Carbide Interfaces

Aluminum nitride and silicon carbide substrates were screen‐printed with fritless gold and fired at 850°C in air. Interfacial diffusion zones up to 7 αm thick were observed, in which the concentrations of Au, Na impurities, and combined O varied together. Secondary ion mass and photoelectron spectro...

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Veröffentlicht in:Journal of the American Ceramic Society 1989-11, Vol.72 (11), p.2084-2087
Hauptverfasser: Zdaniewski, Wieslaw A., Houser, Cheryl A.
Format: Artikel
Sprache:eng
Schlagworte:
aluminum nitride
Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
coatings
diffusion
Exact sciences and technology
interfaces
silicon carbide
Technical ceramics
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Beschreibung
Zusammenfassung:Aluminum nitride and silicon carbide substrates were screen‐printed with fritless gold and fired at 850°C in air. Interfacial diffusion zones up to 7 αm thick were observed, in which the concentrations of Au, Na impurities, and combined O varied together. Secondary ion mass and photoelectron spectroscopy revealed oxidized Al in the gold conductor supported by AIN. It is suggested that enhanced oxidation accompanies the diffusion of Au into the ceramics.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1989.tb06035.x