Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers

It has been found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450 C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1 deg. Previously, tilt angles of greater than 1.5 deg were required to achieve 6H on 6H at t...

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Veröffentlicht in:	Applied physics letters 1991-07, Vol.59 (3), p.333-335
Hauptverfasser:	Powell, J. A., Petit, J. B., Edgar, J. H., Jenkins, I. G., Matus, L. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Solid-State Physics Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	It has been found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450 C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1 deg. Previously, tilt angles of greater than 1.5 deg were required to achieve 6H on 6H at this growth temperature. In addition, 3C-SiC could be induced to grow within selected regions on the 6H substrate. the 3C regions contained few (or zero) double-positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.105587