EBIC probing — a possible tool for the verification of simulated electron beam exposure widths

EBIC probing — a possible tool for the verification of simulated electron beam exposure widths

This paper presents the application of the EBIC contrast width measurement technique for the verification of simulated electron beam exposure widths. The measurements were performed on p-i-n configuration of a-Si:H, as a case study, at various exposure conditions. The measured values of EBIC contras...

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Veröffentlicht in:Microelectronic engineering 1989, Vol.9 (1), p.625-628
Hauptverfasser: Singh, M., Rajopadhye, N.R., Raja, N.K.L., Khokle, W.S.
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper presents the application of the EBIC contrast width measurement technique for the verification of simulated electron beam exposure widths. The measurements were performed on p-i-n configuration of a-Si:H, as a case study, at various exposure conditions. The measured values of EBIC contrast width were compared with the widths of simulated electron energy exposure profiles.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(89)90133-0