1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy

GaAs and GaAlAs double-heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for in...

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Veröffentlicht in:	Applied physics letters 1989, Vol.55 (20), p.2105-2107
Hauptverfasser:	GALTIER, P, POCHOLLE, J. P, CHARASSE, M. N, DE CREMOUX, B, HIRTZ, J. P, GROUSSIN, B, BENYATTOU, T, GUILLOT, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other luminescence and radiative recombination Physics
Online-Zugang:	Volltext
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