1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy

1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy

GaAs and GaAlAs double-heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for in...

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Veröffentlicht in:Applied physics letters 1989, Vol.55 (20), p.2105-2107
Hauptverfasser: GALTIER, P, POCHOLLE, J. P, CHARASSE, M. N, DE CREMOUX, B, HIRTZ, J. P, GROUSSIN, B, BENYATTOU, T, GUILLOT, G
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other luminescence and radiative recombination
Physics
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Zusammenfassung:GaAs and GaAlAs double-heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for injection currents as low as 0.8 mA/cm2 and an external quantum efficiency of 10−6 has been found at 300 K. Preliminary data concerning the energy transfer from the injected carriers to the rare earth are provided.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102077