1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy
GaAs and GaAlAs double-heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for in...
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| Veröffentlicht in: | Applied physics letters 1989, Vol.55 (20), p.2105-2107 |
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| container_issue | 20 |
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| container_title | Applied physics letters |
| container_volume | 55 |
| creator | GALTIER, P POCHOLLE, J. P CHARASSE, M. N DE CREMOUX, B HIRTZ, J. P GROUSSIN, B BENYATTOU, T GUILLOT, G |
| description | GaAs and GaAlAs double-heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for injection currents as low as 0.8 mA/cm2 and an external quantum efficiency of 10−6 has been found at 300 K. Preliminary data concerning the energy transfer from the injected carriers to the rare earth are provided. |
| doi_str_mv | 10.1063/1.102077 |
| format | Article |
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P ; CHARASSE, M. N ; DE CREMOUX, B ; HIRTZ, J. P ; GROUSSIN, B ; BENYATTOU, T ; GUILLOT, G</creator><creatorcontrib>GALTIER, P ; POCHOLLE, J. P ; CHARASSE, M. N ; DE CREMOUX, B ; HIRTZ, J. P ; GROUSSIN, B ; BENYATTOU, T ; GUILLOT, G</creatorcontrib><description>GaAs and GaAlAs double-heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for injection currents as low as 0.8 mA/cm2 and an external quantum efficiency of 10−6 has been found at 300 K. Preliminary data concerning the energy transfer from the injected carriers to the rare earth are provided.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.102077</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other luminescence and radiative recombination ; Physics</subject><ispartof>Applied physics letters, 1989, Vol.55 (20), p.2105-2107</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c202t-30a3577a04429c42b39ef0fc7025b136760fcddf6ade631031e7b54f7ba5602d3</citedby><cites>FETCH-LOGICAL-c202t-30a3577a04429c42b39ef0fc7025b136760fcddf6ade631031e7b54f7ba5602d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6659651$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>GALTIER, P</creatorcontrib><creatorcontrib>POCHOLLE, J. 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Preliminary data concerning the energy transfer from the injected carriers to the rare earth are provided.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other luminescence and radiative recombination</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNo9kM1KxDAUhYMoOI6Cj5CFiJtqfprELgfRURhwo-tym95IpWlq0qLzbj6Dz2R0xNU5B7574B5CTjm75EzLK55FMGP2yIJnKSTn1_tkwRiTha4UPyRHKb3mqISUC-L5pSrp16enMQRfTOhHjDDNESn2aKcY-tl3AyaLg0UaHMXYdLMv2jBiS9ewShSGX9Nn-xLD-0CbLfUhX889RNogeIpjN8HH9pgcOOgTnvzpkjzf3T7d3Bebx_XDzWpTWMHEVEgGUhkDrCxFZUvRyAodc9YwoRoutdE5tK3T0KKWnEmOplGlMw0ozUQrl-R81zvG8DZjmmrf5Q_6HgYMc6qF4sKoSmXwYgfaGFKK6Ooxdh7ituas_tmz5vVuz4ye_XVCstC7CIPt0j-vtaq04vIb3zN0gg</recordid><startdate>1989</startdate><enddate>1989</enddate><creator>GALTIER, P</creator><creator>POCHOLLE, J. 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P</au><au>GROUSSIN, B</au><au>BENYATTOU, T</au><au>GUILLOT, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>1989</date><risdate>1989</risdate><volume>55</volume><issue>20</issue><spage>2105</spage><epage>2107</epage><pages>2105-2107</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>GaAs and GaAlAs double-heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for injection currents as low as 0.8 mA/cm2 and an external quantum efficiency of 10−6 has been found at 300 K. Preliminary data concerning the energy transfer from the injected carriers to the rare earth are provided.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.102077</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1989, Vol.55 (20), p.2105-2107 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other luminescence and radiative recombination Physics |
| title | 1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy |
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