Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering
Data are presented on high-quality buried heterostructure lasers fabricated by laser-assisted disordering of GaAs-AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB att...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1988-04, Vol.52 (17), p.1371-1373 |
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| container_issue | 17 |
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| container_title | Appl. Phys. Lett.; (United States) |
| container_volume | 52 |
| creator | EPLER, J. E THORNTON, R. L PAOLI, T. L |
| description | Data are presented on high-quality buried heterostructure lasers fabricated by laser-assisted disordering of GaAs-AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB attenuation of longitudinal side modes. |
| doi_str_mv | 10.1063/1.99119 |
| format | Article |
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E</creatorcontrib><creatorcontrib>THORNTON, R. L</creatorcontrib><creatorcontrib>PAOLI, T. L</creatorcontrib><creatorcontrib>Xerox Palo Alto Research Center, Palo Alto, California 94304</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>EPLER, J. E</au><au>THORNTON, R. L</au><au>PAOLI, T. L</au><aucorp>Xerox Palo Alto Research Center, Palo Alto, California 94304</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1988-04-25</date><risdate>1988</risdate><volume>52</volume><issue>17</issue><spage>1371</spage><epage>1373</epage><pages>1371-1373</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Data are presented on high-quality buried heterostructure lasers fabricated by laser-assisted disordering of GaAs-AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB attenuation of longitudinal side modes.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.99119</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1988-04, Vol.52 (17), p.1371-1373 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25113879 |
| source | AIP Digital Archive |
| subjects | ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CURRENTS DATA DESIGN ELECTRIC CURRENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION LASERS NUMERICAL DATA OPERATION Optics Physics PNICTIDES POWER SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes THRESHOLD CURRENT |
| title | Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering |
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