Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering

Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering

Data are presented on high-quality buried heterostructure lasers fabricated by laser-assisted disordering of GaAs-AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB att...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1988-04, Vol.52 (17), p.1371-1373
Hauptverfasser: EPLER, J. E, THORNTON, R. L, PAOLI, T. L
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
DESIGN
ELECTRIC CURRENTS
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
Optics
Physics
PNICTIDES
POWER
SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989)
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
THRESHOLD CURRENT
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Beschreibung
Zusammenfassung:Data are presented on high-quality buried heterostructure lasers fabricated by laser-assisted disordering of GaAs-AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB attenuation of longitudinal side modes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99119