1D modeling of SOI MOSFETs using distinct quasi-fermi potentials

Distinct electron and hole quasi-Fermi potentials, ø f,n and ø f,p , are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of ø f,n , ø f,p in the nonlinear analytical model is demonstrated to describe phenomena like ki...

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Veröffentlicht in:	ESSDERC '91: 21st European Solid State Device Research Conference 1991, Vol.15 (1), p.237-240
Hauptverfasser:	Schubert, M., Höfflinger, B., Schroeder, D., Zingg, R.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Charge carrier processes History Microelectronics MOSFETs Semiconductor films Semiconductor process modeling Silicon Spontaneous emission Voltage
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