1D modeling of SOI MOSFETs using distinct quasi-fermi potentials

1D modeling of SOI MOSFETs using distinct quasi-fermi potentials

Distinct electron and hole quasi-Fermi potentials, ø f,n and ø f,p , are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of ø f,n , ø f,p in the nonlinear analytical model is demonstrated to describe phenomena like ki...

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Veröffentlicht in:ESSDERC '91: 21st European Solid State Device Research Conference 1991, Vol.15 (1), p.237-240
Hauptverfasser: Schubert, M., Höfflinger, B., Schroeder, D., Zingg, R.P.
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Charge carrier processes
History
Microelectronics
MOSFETs
Semiconductor films
Semiconductor process modeling
Silicon
Spontaneous emission
Voltage
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Beschreibung
Zusammenfassung:Distinct electron and hole quasi-Fermi potentials, ø f,n and ø f,p , are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of ø f,n , ø f,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of ø f,p (t) depends on the device history and generation/recombination rates.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(91)90221-X