Ultrahigh Thermal Conductivity of θ-Phase Tantalum Nitride

Extracting long-lasting performance from electronic devices and improving their reliability through effective heat management requires good thermal conductors. Taking both three- and four-phonon scattering as well as electron-phonon and isotope scattering into account, we predict that semimetallic θ...

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Veröffentlicht in:Physical review letters 2021-03, Vol.126 (11), p.115901-115901, Article 115901
Hauptverfasser: Kundu, Ashis, Yang, Xiaolong, Ma, Jinlong, Feng, Tianli, Carrete, Jesús, Ruan, Xiulin, Madsen, Georg K H, Li, Wu
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Sprache:eng
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Zusammenfassung:Extracting long-lasting performance from electronic devices and improving their reliability through effective heat management requires good thermal conductors. Taking both three- and four-phonon scattering as well as electron-phonon and isotope scattering into account, we predict that semimetallic θ-phase tantalum nitride (θ-TaN) has an ultrahigh thermal conductivity (κ), of 995 and 820  W m^{-1} K^{-1} at room temperature along the a and c axes, respectively. Phonons are found to be the main heat carriers, and the high κ hinges on a particular combination of factors: weak electron-phonon scattering, low isotopic mass disorder, and a large frequency gap between acoustic and optical phonon modes that, together with acoustic bunching, impedes three-phonon processes. On the other hand, four-phonon scattering is found to be significant. This study provides new insight into heat conduction in semimetallic solids and extends the search for high-κ materials into the realms of semimetals and noncubic crystal structures.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.126.115901