Perovskite Light‐Emitting Diodes with External Quantum Efficiency Exceeding 22% via Small‐Molecule Passivation

Perovskite light‐emitting diodes (PeLEDs) are considered as particularly attractive candidates for high‐quality lighting and displays, due to possessing the features of wide gamut and real color expression. However, most PeLEDs are made from polycrystalline perovskite films that contain a high concentration of defects, including point and extended imperfections. Reducing and mitigating non‐radiative recombination defects in perovskite materials are still crucial prerequisites for achieving high performance in light‐emitting applications. Here, ethoxylated trimethylolpropane triacrylate (ETPTA) is introduced as a functional additive dissolved in antisolvent to passivate surface and bulk defects during the spinning process. The ETPTA can effectively decrease the charge trapping states by passivation and/or suppression of defects. Eventually, the perovskite films that are sufficiently passivated by ETPTA make the devices achieve a maximum external quantum efficiency (EQE) of 22.49%. To our knowledge, these are the most efficient green PeLEDs up to now. In addition, a threefold increase in the T50 operational time of the devices was observed, compared to control samples. These findings provide a simple and effective strategy to make highly efficient perovskite polycrystalline films and their optoelectronics devices. Reducing and mitigating non‐radiative recombination defects in perovskite materials are still crucial prerequisites for achieving high performance in light‐emitting applications. Ethoxylated trimethylolpropane triacrylate is introduced in antisolvent to passivate surface and bulk defects during the spinning process, and external quantum efficiency of quasi‐2D perovskite light‐emitting diodes as high as 22.49% is demonstrated.