The role of MOVPE in the manufacture of high performance InP based optoelectronic devices

This paper describes, for the first time, the development of atmospheric pressure MOVPE growth for the large scale production of InP based opto-electronic devices. Results are presented on material quality, large area uniformity, device performance, yield and reliability, both in an R&D environm...

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Veröffentlicht in:Journal of crystal growth 1988, Vol.93 (1-4), p.792-802
Hauptverfasser: Nelson, A.W., Spurdens, P.C., Cole, S., Walling, R.H., Moss, R.H., Wong, S., Harding, M.J., Cooper, D.M., Devlin, W.J., Robertson, M.J.
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Sprache:eng
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Zusammenfassung:This paper describes, for the first time, the development of atmospheric pressure MOVPE growth for the large scale production of InP based opto-electronic devices. Results are presented on material quality, large area uniformity, device performance, yield and reliability, both in an R&D environment and in the production facility to demonstrate that InP based MOVPE technology has now made the crucial transition from the research and development area into large scale production.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(88)90621-5