Thin amorphous superconducting niobium-silicon films with high normal state resistivity

We have fabricated co-sputtered niobium-silicon films with thicknesses ranging from 1 nm to 200 nm. Analysis by X-ray diffraction and high resolution TEM shows that the films are amorphous. Due to their stability, the films are suited for the fabrication of reliable devices. The resistive transition...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 1990-08, Vol.165, p.1525-1526
Hauptverfasser: van der Zant, H.S.J., Jongste, J.F., Zandbergen, H.W., Mooij, J.E.
Format: Artikel
Sprache:eng
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Zusammenfassung:We have fabricated co-sputtered niobium-silicon films with thicknesses ranging from 1 nm to 200 nm. Analysis by X-ray diffraction and high resolution TEM shows that the films are amorphous. Due to their stability, the films are suited for the fabrication of reliable devices. The resistive transitions of the films have been studied. The onset for superconductivity takes place at sheet resistances lower than the ‘universal’ value of h/4e 2.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(09)80348-7