The charge transport in a silicon resistor at liquid-helium temperatures
A simple, one-dimensional model describing the steady-state charge transport in a silicon n+nn+ (p+pp+) resistor at liquid-helium temperatures is derived. This model includes both space-charge and (contact) barrier limitations to the current flow, typically occurring at these temperatures (T
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 1990-10, Vol.68 (8), p.4091-4099 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4099 |
|---|---|
| container_issue | 8 |
| container_start_page | 4091 |
| container_title | Journal of applied physics |
| container_volume | 68 |
| creator | SIMOEN, E DIERICKX, B DEFERM, L CLAEYS, C DECLERCK, G |
| description | A simple, one-dimensional model describing the steady-state charge transport in a silicon n+nn+ (p+pp+) resistor at liquid-helium temperatures is derived. This model includes both space-charge and (contact) barrier limitations to the current flow, typically occurring at these temperatures (T |
| doi_str_mv | 10.1063/1.346248 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25031449</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>25031449</sourcerecordid><originalsourceid>FETCH-LOGICAL-c286t-bc16075def4c71d8d7decb7495d8abaacf222505566fd33a49d11dc3caf7df043</originalsourceid><addsrcrecordid>eNpF0EtLAzEUhuEgCtYq-BOyUdxMzZkkk8lSilqh4Kauh9NcbGRuTTIL_70jFVydzXO-xUvILbAVsIo_woqLqhT1GVkAq3WhpGTnZMFYCUWtlb4kVyl9MQZQc70gm93BUXPA-OlojtincYiZhp4iTaENZuhpdCmkPESKmbbhOAVbHFwbpo5m140uYp5mck0uPLbJ3fzdJfl4ed6tN8X2_fVt_bQtTFlXudgbqJiS1nlhFNjaKuvMXgktbY17ROPLspRMyqrylnMU2gJYww16ZT0TfEnuT7tjHI6TS7npQjKubbF3w5Sa-ZmDEHqGDydo4pBSdL4ZY-gwfjfAmt9UDTSnVDO9-9vEZLD1cwcT0r_XAqQoFf8BVEppGA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25031449</pqid></control><display><type>article</type><title>The charge transport in a silicon resistor at liquid-helium temperatures</title><source>AIP Digital Archive</source><creator>SIMOEN, E ; DIERICKX, B ; DEFERM, L ; CLAEYS, C ; DECLERCK, G</creator><creatorcontrib>SIMOEN, E ; DIERICKX, B ; DEFERM, L ; CLAEYS, C ; DECLERCK, G</creatorcontrib><description>A simple, one-dimensional model describing the steady-state charge transport in a silicon n+nn+ (p+pp+) resistor at liquid-helium temperatures is derived. This model includes both space-charge and (contact) barrier limitations to the current flow, typically occurring at these temperatures (T<30 K) in Si. Furthermore, account is made for the interactions between the injected free carriers and the shallow doping atoms, i.e., mainly trapping and shallow level impact ionization, yielding breakdown of the material at rather low electrical fields F. Good qualitative agreement with measured current-voltage characteristics is found. In addition, the model is able to describe the flow of avalanche-generated current through the substrate/well of a metal-oxide-semiconductor transistor, which is essential for developing a truly analytical description of the low-temperature drain current kink.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.346248</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Physics</subject><ispartof>Journal of applied physics, 1990-10, Vol.68 (8), p.4091-4099</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c286t-bc16075def4c71d8d7decb7495d8abaacf222505566fd33a49d11dc3caf7df043</citedby><cites>FETCH-LOGICAL-c286t-bc16075def4c71d8d7decb7495d8abaacf222505566fd33a49d11dc3caf7df043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19415427$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SIMOEN, E</creatorcontrib><creatorcontrib>DIERICKX, B</creatorcontrib><creatorcontrib>DEFERM, L</creatorcontrib><creatorcontrib>CLAEYS, C</creatorcontrib><creatorcontrib>DECLERCK, G</creatorcontrib><title>The charge transport in a silicon resistor at liquid-helium temperatures</title><title>Journal of applied physics</title><description>A simple, one-dimensional model describing the steady-state charge transport in a silicon n+nn+ (p+pp+) resistor at liquid-helium temperatures is derived. This model includes both space-charge and (contact) barrier limitations to the current flow, typically occurring at these temperatures (T<30 K) in Si. Furthermore, account is made for the interactions between the injected free carriers and the shallow doping atoms, i.e., mainly trapping and shallow level impact ionization, yielding breakdown of the material at rather low electrical fields F. Good qualitative agreement with measured current-voltage characteristics is found. In addition, the model is able to describe the flow of avalanche-generated current through the substrate/well of a metal-oxide-semiconductor transistor, which is essential for developing a truly analytical description of the low-temperature drain current kink.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpF0EtLAzEUhuEgCtYq-BOyUdxMzZkkk8lSilqh4Kauh9NcbGRuTTIL_70jFVydzXO-xUvILbAVsIo_woqLqhT1GVkAq3WhpGTnZMFYCUWtlb4kVyl9MQZQc70gm93BUXPA-OlojtincYiZhp4iTaENZuhpdCmkPESKmbbhOAVbHFwbpo5m140uYp5mck0uPLbJ3fzdJfl4ed6tN8X2_fVt_bQtTFlXudgbqJiS1nlhFNjaKuvMXgktbY17ROPLspRMyqrylnMU2gJYww16ZT0TfEnuT7tjHI6TS7npQjKubbF3w5Sa-ZmDEHqGDydo4pBSdL4ZY-gwfjfAmt9UDTSnVDO9-9vEZLD1cwcT0r_XAqQoFf8BVEppGA</recordid><startdate>19901015</startdate><enddate>19901015</enddate><creator>SIMOEN, E</creator><creator>DIERICKX, B</creator><creator>DEFERM, L</creator><creator>CLAEYS, C</creator><creator>DECLERCK, G</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19901015</creationdate><title>The charge transport in a silicon resistor at liquid-helium temperatures</title><author>SIMOEN, E ; DIERICKX, B ; DEFERM, L ; CLAEYS, C ; DECLERCK, G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c286t-bc16075def4c71d8d7decb7495d8abaacf222505566fd33a49d11dc3caf7df043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SIMOEN, E</creatorcontrib><creatorcontrib>DIERICKX, B</creatorcontrib><creatorcontrib>DEFERM, L</creatorcontrib><creatorcontrib>CLAEYS, C</creatorcontrib><creatorcontrib>DECLERCK, G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SIMOEN, E</au><au>DIERICKX, B</au><au>DEFERM, L</au><au>CLAEYS, C</au><au>DECLERCK, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The charge transport in a silicon resistor at liquid-helium temperatures</atitle><jtitle>Journal of applied physics</jtitle><date>1990-10-15</date><risdate>1990</risdate><volume>68</volume><issue>8</issue><spage>4091</spage><epage>4099</epage><pages>4091-4099</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>A simple, one-dimensional model describing the steady-state charge transport in a silicon n+nn+ (p+pp+) resistor at liquid-helium temperatures is derived. This model includes both space-charge and (contact) barrier limitations to the current flow, typically occurring at these temperatures (T<30 K) in Si. Furthermore, account is made for the interactions between the injected free carriers and the shallow doping atoms, i.e., mainly trapping and shallow level impact ionization, yielding breakdown of the material at rather low electrical fields F. Good qualitative agreement with measured current-voltage characteristics is found. In addition, the model is able to describe the flow of avalanche-generated current through the substrate/well of a metal-oxide-semiconductor transistor, which is essential for developing a truly analytical description of the low-temperature drain current kink.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.346248</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1990-10, Vol.68 (8), p.4091-4099 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25031449 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics |
| title | The charge transport in a silicon resistor at liquid-helium temperatures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T12%3A35%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20charge%20transport%20in%20a%20silicon%20resistor%20at%20liquid-helium%20temperatures&rft.jtitle=Journal%20of%20applied%20physics&rft.au=SIMOEN,%20E&rft.date=1990-10-15&rft.volume=68&rft.issue=8&rft.spage=4091&rft.epage=4099&rft.pages=4091-4099&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.346248&rft_dat=%3Cproquest_cross%3E25031449%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25031449&rft_id=info:pmid/&rfr_iscdi=true |