The charge transport in a silicon resistor at liquid-helium temperatures

A simple, one-dimensional model describing the steady-state charge transport in a silicon n+nn+ (p+pp+) resistor at liquid-helium temperatures is derived. This model includes both space-charge and (contact) barrier limitations to the current flow, typically occurring at these temperatures (T

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 1990-10, Vol.68 (8), p.4091-4099
Hauptverfasser:	SIMOEN, E, DIERICKX, B, DEFERM, L, CLAEYS, C, DECLERCK, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A simple, one-dimensional model describing the steady-state charge transport in a silicon n+nn+ (p+pp+) resistor at liquid-helium temperatures is derived. This model includes both space-charge and (contact) barrier limitations to the current flow, typically occurring at these temperatures (T
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.346248