Stability of IrTa diffusion barriers
The thermal and chemical stability of amorphous and crystalline IrTa diffusion barriers between silicon and aluminium is investigated. A failure temperature of 550°C is found for amorphous Ir 45Ta 55 at the aluminium interface. The reaction between amorphous Ir 45Ta 55 and silicon occurs at tempera...
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Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1990-09, Vol.7 (1), p.127-134 |
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container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
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creator | De Reus, R. Saris, F.W. Barbour, J.C. |
description | The thermal and chemical stability of amorphous and crystalline IrTa diffusion barriers between silicon and aluminium is investigated. A failure temperature of 550°C is found for amorphous Ir
45Ta
55 at the aluminium interface. The reaction between amorphous Ir
45Ta
55 and silicon occurs at temperatures as high as 875°C. The latter reaction temperature is lowered to 700°C when crystalline IrTa is used. |
doi_str_mv | 10.1016/0921-5107(90)90017-6 |
format | Article |
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45Ta
55 at the aluminium interface. The reaction between amorphous Ir
45Ta
55 and silicon occurs at temperatures as high as 875°C. The latter reaction temperature is lowered to 700°C when crystalline IrTa is used.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/0921-5107(90)90017-6</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Chemical interdiffusion; diffusion barriers ; Condensed matter: structure, mechanical and thermal properties ; Diffusion in solids ; Exact sciences and technology ; Metals. Metallurgy ; Physics ; Transport properties of condensed matter (nonelectronic)</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 1990-09, Vol.7 (1), p.127-134</ispartof><rights>1990</rights><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c296t-1a39d4e81db4eee8a38af06e7f60a38c8c9fa4c7439fc71875686eeae4fdf9d33</citedby><cites>FETCH-LOGICAL-c296t-1a39d4e81db4eee8a38af06e7f60a38c8c9fa4c7439fc71875686eeae4fdf9d33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/0921510790900176$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4364789$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>De Reus, R.</creatorcontrib><creatorcontrib>Saris, F.W.</creatorcontrib><creatorcontrib>Barbour, J.C.</creatorcontrib><title>Stability of IrTa diffusion barriers</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>The thermal and chemical stability of amorphous and crystalline IrTa diffusion barriers between silicon and aluminium is investigated. A failure temperature of 550°C is found for amorphous Ir
45Ta
55 at the aluminium interface. The reaction between amorphous Ir
45Ta
55 and silicon occurs at temperatures as high as 875°C. The latter reaction temperature is lowered to 700°C when crystalline IrTa is used.</description><subject>Applied sciences</subject><subject>Chemical interdiffusion; diffusion barriers</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Diffusion in solids</subject><subject>Exact sciences and technology</subject><subject>Metals. Metallurgy</subject><subject>Physics</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEUhYMoWKtv4GIW4s9iNH-TTDaCFH8KBRfWdUiTG4hMZ2oyFfokvopP5TOYsdKlq3sX3zn3noPQKcHXBBNxgxUlZUWwvFT4SmFMZCn20IjUkpVccb6PRjvkEB2l9IYzRCkdoYuX3ixCE_pN0fliGr8_v-amcMH7dQpdWyxMjAFiOkYH3jQJTv7mGL0-3M8nT-Xs-XE6uZuVlirRl8Qw5TjUxC04ANSG1cZjAdILnHdbW-UNt5Iz5a3MD1aiFgAGuHdeOcbG6Hzru4rd-xpSr5chWWga00K3TppWGFeMDiDfgjZ2KUXwehXD0sSNJlgPreghsh4ia4X1bytaZNnZn79J1jQ-mtaGtNNyJrisVcZutxjkrB-5AJ1sgNaCCxFsr10X_r_zA59SdiI</recordid><startdate>19900901</startdate><enddate>19900901</enddate><creator>De Reus, R.</creator><creator>Saris, F.W.</creator><creator>Barbour, J.C.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19900901</creationdate><title>Stability of IrTa diffusion barriers</title><author>De Reus, R. ; Saris, F.W. ; Barbour, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c296t-1a39d4e81db4eee8a38af06e7f60a38c8c9fa4c7439fc71875686eeae4fdf9d33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Chemical interdiffusion; diffusion barriers</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Diffusion in solids</topic><topic>Exact sciences and technology</topic><topic>Metals. Metallurgy</topic><topic>Physics</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>De Reus, R.</creatorcontrib><creatorcontrib>Saris, F.W.</creatorcontrib><creatorcontrib>Barbour, J.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>De Reus, R.</au><au>Saris, F.W.</au><au>Barbour, J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stability of IrTa diffusion barriers</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>1990-09-01</date><risdate>1990</risdate><volume>7</volume><issue>1</issue><spage>127</spage><epage>134</epage><pages>127-134</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>The thermal and chemical stability of amorphous and crystalline IrTa diffusion barriers between silicon and aluminium is investigated. A failure temperature of 550°C is found for amorphous Ir
45Ta
55 at the aluminium interface. The reaction between amorphous Ir
45Ta
55 and silicon occurs at temperatures as high as 875°C. The latter reaction temperature is lowered to 700°C when crystalline IrTa is used.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/0921-5107(90)90017-6</doi><tpages>8</tpages></addata></record> |
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subjects | Applied sciences Chemical interdiffusion diffusion barriers Condensed matter: structure, mechanical and thermal properties Diffusion in solids Exact sciences and technology Metals. Metallurgy Physics Transport properties of condensed matter (nonelectronic) |
title | Stability of IrTa diffusion barriers |
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