Stability of IrTa diffusion barriers

The thermal and chemical stability of amorphous and crystalline IrTa diffusion barriers between silicon and aluminium is investigated. A failure temperature of 550°C is found for amorphous Ir 45Ta 55 at the aluminium interface. The reaction between amorphous Ir 45Ta 55 and silicon occurs at tempera...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1990-09, Vol.7 (1), p.127-134
Hauptverfasser:	De Reus, R., Saris, F.W., Barbour, J.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical interdiffusion diffusion barriers Condensed matter: structure, mechanical and thermal properties Diffusion in solids Exact sciences and technology Metals. Metallurgy Physics Transport properties of condensed matter (nonelectronic)
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Zusammenfassung:	The thermal and chemical stability of amorphous and crystalline IrTa diffusion barriers between silicon and aluminium is investigated. A failure temperature of 550°C is found for amorphous Ir 45Ta 55 at the aluminium interface. The reaction between amorphous Ir 45Ta 55 and silicon occurs at temperatures as high as 875°C. The latter reaction temperature is lowered to 700°C when crystalline IrTa is used.
ISSN:	0921-5107 1873-4944
DOI:	10.1016/0921-5107(90)90017-6