Semiempirical model for electroabsorption in GaAs/AlGaAs multiple quantum-well modulator structures

A semi-empirical model for electroabsorption in GaAs/AlGaAs quantum wells is proposed which is simple and has sufficient accuracy to make it suitable as a fast design-tool for multiple quantum well (MQW) optical modulators. The model is based on a higher order perturbation approach which includes all bound solutions of the unperturbed Hamiltonian. To complete the model, semi-empirical relationship are set up for both the zero-field absorption peak and the half-width at half-maximum (HWHM) values of the heavy-hole (hh) exciton. Comparison with extensive experimental data show a remarkable agreement for a range of wells between 5 and 20 nm.