Rapid electron beam reacted tantalum/titanium bilayers on silicon

The electrical and structural characteristics of tantalum-titanium bilayers on silicon reacted by electron beam heating have been investigated over a wide range of temperature and time conditions. The reacted layers exhibit low sheet resistance and stable electrical characteristics up to at least 11...

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Veröffentlicht in:Japanese Journal of Applied Physics 1988-12, Vol.27 (12), p.2333-2339
Hauptverfasser: RAMAN, V. K, MAHMOOD, F, MCMAHON, R. A, AHMED, H, JEYNES, C
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Sprache:eng
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