Rapid electron beam reacted tantalum/titanium bilayers on silicon
The electrical and structural characteristics of tantalum-titanium bilayers on silicon reacted by electron beam heating have been investigated over a wide range of temperature and time conditions. The reacted layers exhibit low sheet resistance and stable electrical characteristics up to at least 11...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1988-12, Vol.27 (12), p.2333-2339 |
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Format: | Artikel |
Sprache: | eng |
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