Probing of basal planes of MoS2 by scanning tunneling microscopy
Atomically resolved images of MoS2 have been obtained using scanning tunneling microscopy with both positively and negatively biased samples yielding the hexagonal symmetry of the surface of the crystal. Also measured were curves of tunneling current as a function of bias voltage, from which the den...
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| Veröffentlicht in: | Applied physics letters 1988-06, Vol.52 (26), p.2252-2254 |
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| container_issue | 26 |
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| container_title | Applied physics letters |
| container_volume | 52 |
| creator | SARID, D HENSON, T. D ARMSTRONG, N. R BELL, L. S |
| description | Atomically resolved images of MoS2 have been obtained using scanning tunneling microscopy with both positively and negatively biased samples yielding the hexagonal symmetry of the surface of the crystal. Also measured were curves of tunneling current as a function of bias voltage, from which the density of states of the valence and conduction bands can be inferred. |
| doi_str_mv | 10.1063/1.99769 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24965173</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24965173</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-5ac677f8eb2c46b2b940d9b41855d676a6ed841652b0ac8f508ac42e84a1f4473</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKv4F2Yhupqam3d2SqkPqCio65CkiYxMJ2PSLvrvnbHF1T0HPg7nHoQuAc8AC3oLM62l0EdoAljKmgKoYzTBGNNaaA6n6KyU78FyQukE3b3l5Jruq0qxcrbYtupb24Uy-pf0Tiq3q4q3XTcym23XhXZU68bnVHzqd-foJNq2hIvDnaLPh8XH_Klevj4-z--XtadMb2puvZAyquCIZ8IRpxleacdAcb4SUlgRVoqB4MRh61XkWFnPSFDMQmRM0im63uf2Of1sQ9mYdVN8aMe2aVsMYVpwkHQAb_bg2LDkEE2fm7XNOwPYjAsZMH8LDeTVIdIOL7Yx28435R-XBGvQiv4C65tjiA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24965173</pqid></control><display><type>article</type><title>Probing of basal planes of MoS2 by scanning tunneling microscopy</title><source>AIP Digital Archive</source><creator>SARID, D ; HENSON, T. D ; ARMSTRONG, N. R ; BELL, L. S</creator><creatorcontrib>SARID, D ; HENSON, T. D ; ARMSTRONG, N. R ; BELL, L. S</creatorcontrib><description>Atomically resolved images of MoS2 have been obtained using scanning tunneling microscopy with both positively and negatively biased samples yielding the hexagonal symmetry of the surface of the crystal. Also measured were curves of tunneling current as a function of bias voltage, from which the density of states of the valence and conduction bands can be inferred.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.99769</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Surface and interface electron states</subject><ispartof>Applied physics letters, 1988-06, Vol.52 (26), p.2252-2254</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-5ac677f8eb2c46b2b940d9b41855d676a6ed841652b0ac8f508ac42e84a1f4473</citedby><cites>FETCH-LOGICAL-c349t-5ac677f8eb2c46b2b940d9b41855d676a6ed841652b0ac8f508ac42e84a1f4473</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7209198$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SARID, D</creatorcontrib><creatorcontrib>HENSON, T. D</creatorcontrib><creatorcontrib>ARMSTRONG, N. R</creatorcontrib><creatorcontrib>BELL, L. S</creatorcontrib><title>Probing of basal planes of MoS2 by scanning tunneling microscopy</title><title>Applied physics letters</title><description>Atomically resolved images of MoS2 have been obtained using scanning tunneling microscopy with both positively and negatively biased samples yielding the hexagonal symmetry of the surface of the crystal. Also measured were curves of tunneling current as a function of bias voltage, from which the density of states of the valence and conduction bands can be inferred.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surface and interface electron states</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLAzEUhYMoWKv4F2Yhupqam3d2SqkPqCio65CkiYxMJ2PSLvrvnbHF1T0HPg7nHoQuAc8AC3oLM62l0EdoAljKmgKoYzTBGNNaaA6n6KyU78FyQukE3b3l5Jruq0qxcrbYtupb24Uy-pf0Tiq3q4q3XTcym23XhXZU68bnVHzqd-foJNq2hIvDnaLPh8XH_Klevj4-z--XtadMb2puvZAyquCIZ8IRpxleacdAcb4SUlgRVoqB4MRh61XkWFnPSFDMQmRM0im63uf2Of1sQ9mYdVN8aMe2aVsMYVpwkHQAb_bg2LDkEE2fm7XNOwPYjAsZMH8LDeTVIdIOL7Yx28435R-XBGvQiv4C65tjiA</recordid><startdate>19880627</startdate><enddate>19880627</enddate><creator>SARID, D</creator><creator>HENSON, T. D</creator><creator>ARMSTRONG, N. R</creator><creator>BELL, L. S</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19880627</creationdate><title>Probing of basal planes of MoS2 by scanning tunneling microscopy</title><author>SARID, D ; HENSON, T. D ; ARMSTRONG, N. R ; BELL, L. S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-5ac677f8eb2c46b2b940d9b41855d676a6ed841652b0ac8f508ac42e84a1f4473</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surface and interface electron states</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SARID, D</creatorcontrib><creatorcontrib>HENSON, T. D</creatorcontrib><creatorcontrib>ARMSTRONG, N. R</creatorcontrib><creatorcontrib>BELL, L. S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SARID, D</au><au>HENSON, T. D</au><au>ARMSTRONG, N. R</au><au>BELL, L. S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Probing of basal planes of MoS2 by scanning tunneling microscopy</atitle><jtitle>Applied physics letters</jtitle><date>1988-06-27</date><risdate>1988</risdate><volume>52</volume><issue>26</issue><spage>2252</spage><epage>2254</epage><pages>2252-2254</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Atomically resolved images of MoS2 have been obtained using scanning tunneling microscopy with both positively and negatively biased samples yielding the hexagonal symmetry of the surface of the crystal. Also measured were curves of tunneling current as a function of bias voltage, from which the density of states of the valence and conduction bands can be inferred.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.99769</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1988-06, Vol.52 (26), p.2252-2254 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24965173 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states |
| title | Probing of basal planes of MoS2 by scanning tunneling microscopy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T07%3A18%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Probing%20of%20basal%20planes%20of%20MoS2%20by%20scanning%20tunneling%20microscopy&rft.jtitle=Applied%20physics%20letters&rft.au=SARID,%20D&rft.date=1988-06-27&rft.volume=52&rft.issue=26&rft.spage=2252&rft.epage=2254&rft.pages=2252-2254&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.99769&rft_dat=%3Cproquest_cross%3E24965173%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24965173&rft_id=info:pmid/&rfr_iscdi=true |