Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs

MODFETs have been fabricated using heterojunctions consisting of AlGaAs and pseudomorphic InGaAs, grown on GaAs substrates. The large conduction band discontinuity (about 0.46 eV for 25% In and Al concentration) leads to a 2-D electron density as high as 2.3*10/sup 12/ cm/sup -2/, with electron mobi...

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Veröffentlicht in:	IEEE transactions on electron devices 1988-07, Vol.35 (7), p.879-886
Hauptverfasser:	Moll, N., Hueschen, M.R., Fischer-Colbrie, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Delay effects Electron mobility Electronics Exact sciences and technology Extrapolation Gallium arsenide HEMTs Heterojunctions Indium gallium arsenide Microwave devices MODFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transconductance Transistors
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