Ultrahigh power 38 W continuous-wave monolithic laser diode arrays

Continuous-wave output power levels of 38 W from one facet have been obtained from a 1 cm monolithic AlGaAs laser array with a 2 mm total active aperture width. One of the diodes has been operated under constant current conditions (initial output power of 5 W) at room temperature for over 1100 h.

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1988-06, Vol.52 (26), p.2220-2221
Hauptverfasser:	SAKAMOTO, M, WELCH, D. F, HARNAGEL, G. L, STREIFER, W, KUNG, H, SCIFRES, D. R
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CURRENTS DATA ELECTRIC CURRENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION LASERS LIFETIME NUMERICAL DATA OPERATION Optics Physics PNICTIDES POWER SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989) SEMICONDUCTOR DIODES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Continuous-wave output power levels of 38 W from one facet have been obtained from a 1 cm monolithic AlGaAs laser array with a 2 mm total active aperture width. One of the diodes has been operated under constant current conditions (initial output power of 5 W) at room temperature for over 1100 h.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.99537