Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance
Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 mu m and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The...
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| Veröffentlicht in: | IEEE electron device letters 1988-06, Vol.9 (6), p.306-308 |
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| container_end_page | 308 |
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| container_issue | 6 |
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| container_title | IEEE electron device letters |
| container_volume | 9 |
| creator | Kim, S.J. Guth, G. Vella-Coleiro, G.P. |
| description | Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 mu m and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used.< > |
| doi_str_mv | 10.1109/55.725 |
| format | Article |
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The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.725</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Doping ; Electron mobility ; Electronics ; Exact sciences and technology ; FETs ; Indium phosphide ; Insulation ; Integrated circuits ; JFETs ; Optical amplifiers ; Power amplifiers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Threshold voltage ; Transconductance</subject><ispartof>IEEE electron device letters, 1988-06, Vol.9 (6), p.306-308</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-9b651416eae873b0204e680e8f72fc09e904b7dabd770482cddd028a26d599393</citedby><cites>FETCH-LOGICAL-c359t-9b651416eae873b0204e680e8f72fc09e904b7dabd770482cddd028a26d599393</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/725$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/725$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7068810$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, S.J.</creatorcontrib><creatorcontrib>Guth, G.</creatorcontrib><creatorcontrib>Vella-Coleiro, G.P.</creatorcontrib><title>Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 mu m and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used.< ></description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Doping</subject><subject>Electron mobility</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Indium phosphide</subject><subject>Insulation</subject><subject>Integrated circuits</subject><subject>JFETs</subject><subject>Optical amplifiers</subject><subject>Power amplifiers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Threshold voltage</subject><subject>Transconductance</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqN0T1PwzAQBmALgUQpsLJ6QGwp58SfI6r4KKoEQ5kjx760RmlS4kSo_55UregI0w333KvTHSHXDCaMgbkXYqJScUJGTAidgJDZKRmB4izJGMhzchHjJwDjXPERWczqDpet7dBTu95UoQzYRtrHUC9p2VfVloamTsLQsvUOzep3-vr0uIj0O3QrugrLFe1aW0fX1L53na0dXpKz0lYRrw51TD6GielLMn97nk0f5onLhOkSU0jBOJNoUausgBQ4Sg2oS5WWDgwa4IXytvBKAdep895Dqm0qvTAmM9mY3O1zN23z1WPs8nWIDqthVWz6mKeaaw5G_w25yRQo-S8oNVNH6NomxhbLfNOGtW23OYN894ZciHx4wwBvD4k2OluVw6lciL9agdSawcBu9iwg4rE7BPwAAWuNZg</recordid><startdate>19880601</startdate><enddate>19880601</enddate><creator>Kim, S.J.</creator><creator>Guth, G.</creator><creator>Vella-Coleiro, G.P.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope></search><sort><creationdate>19880601</creationdate><title>Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance</title><author>Kim, S.J. ; Guth, G. ; Vella-Coleiro, G.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-9b651416eae873b0204e680e8f72fc09e904b7dabd770482cddd028a26d599393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Doping</topic><topic>Electron mobility</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Indium phosphide</topic><topic>Insulation</topic><topic>Integrated circuits</topic><topic>JFETs</topic><topic>Optical amplifiers</topic><topic>Power amplifiers</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Threshold voltage</topic><topic>Transconductance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, S.J.</creatorcontrib><creatorcontrib>Guth, G.</creatorcontrib><creatorcontrib>Vella-Coleiro, G.P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, S.J.</au><au>Guth, G.</au><au>Vella-Coleiro, G.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1988-06-01</date><risdate>1988</risdate><volume>9</volume><issue>6</issue><spage>306</spage><epage>308</epage><pages>306-308</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 mu m and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.725</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1988-06, Vol.9 (6), p.306-308 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24936817 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Doping Electron mobility Electronics Exact sciences and technology FETs Indium phosphide Insulation Integrated circuits JFETs Optical amplifiers Power amplifiers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Threshold voltage Transconductance |
| title | Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance |
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