Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance

Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance

Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 mu m and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The...

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Veröffentlicht in:IEEE electron device letters 1988-06, Vol.9 (6), p.306-308
Hauptverfasser: Kim, S.J., Guth, G., Vella-Coleiro, G.P.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Design. Technologies. Operation analysis. Testing
Doping
Electron mobility
Electronics
Exact sciences and technology
FETs
Indium phosphide
Insulation
Integrated circuits
JFETs
Optical amplifiers
Power amplifiers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Transconductance
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Zusammenfassung:Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 mu m and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.725