Molecular beam epitaxial growth and characterization of ZnTe and CdTe on (001) GaAs

Molecular beam epitaxial growth and characterization of ZnTe and CdTe on (001) GaAs

Investigations of elemental diffusion in (001) and (111) oriented CdTe and ZnTe layers grown by molecular beam epitaxy on (001) GaAs substrates show high Ga diffusion along dislocations and defects generated at the substrate-epilayer interface. The use of CdTe/ZnTe superlattice buffer layers and nuc...

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Veröffentlicht in:Journal of crystal growth 1988-01, Vol.86 (1-4), p.296-302
Hauptverfasser: Wagner, B.K., Oakes, J.D., Summers, C.J.
Format: Artikel
Sprache:eng
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Zusammenfassung:Investigations of elemental diffusion in (001) and (111) oriented CdTe and ZnTe layers grown by molecular beam epitaxy on (001) GaAs substrates show high Ga diffusion along dislocations and defects generated at the substrate-epilayer interface. The use of CdTe/ZnTe superlattice buffer layers and nucleation on near-atomically planar GaAs surfaces is shown to suppress Ga diffusion to background detection levels.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(90)90733-2