Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length

Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length

The millimeter-wave performance is reported for Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As high-electron-mobility transistors (HEMTs) with 0.2- mu m and 0.1- mu m-long gates on material grown by molecular-beam epitaxy on semi-insulating InP substrates. Devices of 50- mu m width exhibited...

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Veröffentlicht in:IEEE electron device letters 1988-12, Vol.9 (12), p.647-649
Hauptverfasser: Mishra, U.K., Brown, A.S., Rosenbaum, S.E., Hooper, C.E., Pierce, M.W., Delaney, M.J., Vaughn, S., White, K.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Buffer layers
Electronics
Epitaxial layers
Exact sciences and technology
Fabrication
Gain
Gallium arsenide
HEMTs
Indium phosphide
Microwave devices
MODFETs
Noise figure
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Zusammenfassung:The millimeter-wave performance is reported for Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As high-electron-mobility transistors (HEMTs) with 0.2- mu m and 0.1- mu m-long gates on material grown by molecular-beam epitaxy on semi-insulating InP substrates. Devices of 50- mu m width exhibited extrinsic transconductances of 800 and 1080 mS/mm, respectively. External f/sub T/ (maximum frequency of oscillation) of 120 and 135 GHz, respectively, were measured. A maximum f/sub T/ of 170 GHz was obtained from a 0.1*200- mu m/sup 2/ device. A minimum noise figure of 0.8 dB and associated gain of 8.7 dB were obtained from a single-stage amplifier at frequencies near 63 GHz.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.20424