Low pressure chemical vapor deposition of tantalum silicide

TaSi sub 2 films were deposited from mixed gases at pressures of 0.1- 1 torr and 620- 700 degrees C at rates of 30- 40 nm/min. 25 refs.

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of the Electrochemical Society 1988, Vol.135 (6), p.1483-1490
1. Verfasser:	REYNOLDS, G. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	TaSi sub 2 films were deposited from mixed gases at pressures of 0.1- 1 torr and 620- 700 degrees C at rates of 30- 40 nm/min. 25 refs.
ISSN:	0013-4651 1945-7111
DOI:	10.1149/1.2096040