Laser Induced Photolytic Tin Deposition With High Deposition Rates for the Repair of Clear X-Ray Mask Defects
The laser induced photolytic deposition of Sn from tetramethyltin is a useful method for the repair of clear defects on X-ray masks because this process meets most of the specific demands on the X-ray mask technology. The principally low deposition rates of photolytic processes could be enhanced by...
Gespeichert in:
Veröffentlicht in: | Microelectronic engineering 1988-09, Vol.9 (1-4), p.175-178 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The laser induced photolytic deposition of Sn from tetramethyltin is a useful method for the repair of clear defects on X-ray masks because this process meets most of the specific demands on the X-ray mask technology. The principally low deposition rates of photolytic processes could be enhanced by one order of magnitude by adding oxygen to the tetramethyltin precursor gas. The Sn spots could be micromachined with a focussed ion beam (FIB) resulting in very steep Sn edges. Furthermore, for the first time real clear defects have been reparied on X-ray masks which will be used for the production of devices and ion projection masks. Graphs, Photomicrographs. 9 ref.--AA |
---|---|
ISSN: | 0167-9317 |