Metallic behavior of lanthanum disilicide

Metallic behavior of lanthanum disilicide

Polycrystalline thin films of LaSi2 were prepared by reaction of sputter-deposited lanthanum layers with silicon wafers. Samples of the low-temperature tetragonal and the high-temperature orthorhombic phases were separately obtained. The room-temperature intrinsic resistivities were 24 and 57 microo...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1988-10, Vol.53 (14), p.1272-1273
Hauptverfasser: Long, Robert G., Bost, M. C., Mahan, John E.
Format: Artikel
Sprache:eng
Schlagworte:
360201 > Ceramics, Cermets, & Refractories-- Preparation & Fabrication
360202 > Ceramics, Cermets, & Refractories-- Structure & Phase Studies
CHEMICAL REACTIONS
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
LANTHANUM COMPOUNDS
LANTHANUM SILICIDES
LIGHT TRANSMISSION
MATERIALS SCIENCE
OXIDATION
PHYSICAL PROPERTIES
Physics
RARE EARTH COMPOUNDS
SILICIDES
SILICON COMPOUNDS 360204 > Ceramics, Cermets, & Refractories-- Physical Properties
Solid-State Physics
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS
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Zusammenfassung:Polycrystalline thin films of LaSi2 were prepared by reaction of sputter-deposited lanthanum layers with silicon wafers. Samples of the low-temperature tetragonal and the high-temperature orthorhombic phases were separately obtained. The room-temperature intrinsic resistivities were 24 and 57 microohm cm for the low- and high-temperature structures, respectively. Although lanthanum disilicide had been previously reported to be a semiconductor, classical metallic behavior was found for both phases.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100447