Efficiency enhancement in quantum well lasers via tailored doping profiles

Reduced doping concentrations proximate to the active region in single quantum well (Al)GaAs lasers have been used to improve the external quantum efficiency. A substantial enhancement is observed in a structure in which, by design, the mode overlap with the doped confining regions is large. For a s...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1988-06, Vol.52 (24), p.2017-2018
Hauptverfasser:	WATERS, R. G, HILL, D. S, YELLEN, S. L
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CRYSTAL DOPING DATA DESIGN EFFICIENCY ELECTRONIC STRUCTURE ENGINEERING Exact sciences and technology EXPERIMENTAL DATA Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION LASERS NUMERICAL DATA Optics Physics PNICTIDES QUANTUM EFFICIENCY SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes
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Zusammenfassung:	Reduced doping concentrations proximate to the active region in single quantum well (Al)GaAs lasers have been used to improve the external quantum efficiency. A substantial enhancement is observed in a structure in which, by design, the mode overlap with the doped confining regions is large. For a structure in which the mode is tightly confined, doping modifications have no measurable effect.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.99568