Efficient, high-power (> 150 mW) grating surface emitting lasers

Surface emitting AlGaAs second-order distributed Bragg reflector lasers using a superlattice graded-index separate confinement heterostructure with a single quantum well have been fabricated. The total peak power is emitted coherently from both gratings into a 0.06° full width half-power single lobe...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1988-03, Vol.52 (13), p.1037-1039
Hauptverfasser:	EVANS, G. A, CARLSON, N. W, REICHERT, W. F, CHINN, S. R, SHEALY, J. R, ZORY, P. S, HAMMER, J. M, LURIE, M, BUTLER, J. K, CARR, L. A, HAWRYLO, F. Z, JAMES, E. A, KAISER, C. J, KIRK, J. B
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES BRAGG REFLECTION DATA EFFICIENCY ENGINEERING Exact sciences and technology EXPERIMENTAL DATA Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS INFORMATION JUNCTIONS LASERS MODULATION NUMERICAL DATA Optics Physics PNICTIDES POWER QUANTUM EFFICIENCY REFLECTION SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS 420300 > Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes
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Beschreibung
Zusammenfassung:	Surface emitting AlGaAs second-order distributed Bragg reflector lasers using a superlattice graded-index separate confinement heterostructure with a single quantum well have been fabricated. The total peak power is emitted coherently from both gratings into a 0.06° full width half-power single lobe far field pattern. Peak powers are in excess of 150 mW. The external differential quantum efficiency is as high as 30%. Under severe current modulation conditions, the stable single longitudinal mode had 20–45 dB wavelength side mode rejection.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.99202