Attainment of transparent boron-implanted layers for silicon solar cell applications

Attainment of transparent boron-implanted layers for silicon solar cell applications

The formation of boron-doped p+ layers that are transparent to minority-carrier transport is reported. Ion implantation is used to limit the peak dopant concentration to 5×1018 cm−3 so as to avoid deleterious heavy doping effects. Solar cell open circuit voltage of 657 mV has been obtained in this w...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1985-10, Vol.47 (7), p.731-732
Hauptverfasser: SPITZER, M. B, KEAVNEY, C. J
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
BORON IONS
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
CRYSTAL DOPING
DATA
DIRECT ENERGY CONVERTERS
ELECTRIC POTENTIAL
Energy
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
INFORMATION
ION IMPLANTATION
IONS
JUNCTIONS
Natural energy
NUMERICAL DATA
Other techniques and industries
P-N JUNCTIONS
PASSIVATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR ENERGY
SOLAR EQUIPMENT 140501 > Solar Energy Conversion-- Photovoltaic Conversion
Solar thermal conversion
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Beschreibung
Zusammenfassung:The formation of boron-doped p+ layers that are transparent to minority-carrier transport is reported. Ion implantation is used to limit the peak dopant concentration to 5×1018 cm−3 so as to avoid deleterious heavy doping effects. Solar cell open circuit voltage of 657 mV has been obtained in this way. The importance of surface passivation is indicated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96019