Revealing Structural Disorder in Hydrogenated Amorphous Silicon for a Low‐Loss Photonic Platform at Visible Frequencies

The high refractive index of hydrogenated amorphous silicon (a‐Si:H) at optical frequencies is an essential property for the efficient modulation of the phase and amplitude of light. However, substantial optical loss represented by its high extinction coefficient prevents it from being utilized widely. Here, the bonding configurations of a‐Si:H are investigated, in order to manipulate the extinction coefficient and produce a material that is competitive with conventional transparent materials, such as titanium dioxide and gallium nitride. This is achieved by controlling the hydrogenation and silicon disorder by adjusting the chemical deposition conditions. The extinction coefficient of the low‐loss a‐Si:H reaches a minimum of 0.082 at the wavelength of 450 nm, which is lower than that of crystalline silicon (0.13). Beam‐steering metasurfaces are demonstrated to validate the low‐loss optical properties, reaching measured efficiencies of 42%, 62%, and 75% at the wavelengths of 450, 532, and 635 nm, respectively. Considering its compatibility with mature complementary metal–oxide–semiconductor processes, the low‐loss a‐Si:H will provide a platform for efficient photonic operating in the full visible regime. The atomic bonding networks of hydrogenated amorphous silicon are revealed to reduce its optical loss in the visible region. Atomic bonding networks are manipulated by controlling the process conditions of plasma‐enhanced chemical vapor deposition. The optimal atomic configuration demonstrates the low‐loss hydrogenated amorphous silicon as being an efficient photonic platform by expanding the working frequencies from the infrared to the visible spectrum.