The nature of negative linear expansion in layer crystals C, Bn, GaS, GaSe and InSe

Experimental investigations of thermal expansion parallel and perpendicular to the layers plane of layer crystals GaS, GaSe and InSe are described. The obtained results are analized together with known thermal expansion data on graphite, C, and boron nitride, BN. Theoretical calculations of linear e...

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Veröffentlicht in:Solid state communications 1985-01, Vol.53 (11), p.967-971
Hauptverfasser: Belenkii, G.L., Salaev, E.Yu, Suleimanov, R.A., Abdullaev, N.A., Shteinshraiber, V.Ya
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Sprache:eng
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Zusammenfassung:Experimental investigations of thermal expansion parallel and perpendicular to the layers plane of layer crystals GaS, GaSe and InSe are described. The obtained results are analized together with known thermal expansion data on graphite, C, and boron nitride, BN. Theoretical calculations of linear expansion coefficients are carried out on the basis of the model of highly anisotropic crystal. It is shown, that the negative thermal expansion in the layer plane, typical of layer crystals, is due to “bending” waves, acoustic waves propagating in the layer plane and polarized perpendicular to this plane (TA ⊥ mode)
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(85)90470-3