Characteristics of mass-transported p substrate GaInAsP/InP buried-heterostructure lasers with analytical solutions for electrical and thermal resistances

Devices with series resistances of only 3 OMEGA are in good agreement with p substrate spreading resistance calculated using conformal mapping. Development of this theory yields simple formulas of thermal resistances of heat generation. The p substrate lasers also show threshold currents > or = 4.5 mA, differential quantum efficiencies of 34%/facet, output powers of 33%/facet, and a max total electrical-to-optical power conversion efficiency of 36%.