Observation of radiation defects generated in edge defined film fed growth silicon ribbons under 400 kV irradiation in the high-resolution electron microscope

Irradiation of edge defined film fed growth silicon in the 400 kV HREM generates two kinds of radiation defects. The first ones are {113} planar faults which appear both as single defects and in more complicated arrangements (‘‘snaking ribbons,’’ crossing defects). When a {113} defect encounters a twin boundary at an angle close to 80° the defect penetrates the boundary and continuous on the mirror symmetric {113} plane. Defects generated inside a twin band at an inclination of 30° are not able to penetrate the boundary. This difference can be explained by considering the size of the residual defects left in the boundary. The second type of defects are {111} defects which appear as single defects or in groups. The {111} defects are nucleated exclusively on the outside of twin bands but in wider twins they also form inside. This finding can be explained by considering the interaction between the interstitial, which is an extended defect and the twin boundary, which is a planar defect in which higher-order nearest-neighbor distances are reduced.