Spin- and angle-resolved photoemission study of bcc-Co films grown on (110) GaAs by molecular beam epitaxy

The recent success in preparing single-crystal (110) films of metastable bcc-phase Co by molecular beam epitaxy on GaAs has permitted spin- and angle-resolved photoemission studies to be carried out on this material. These studies confirm the theoretical predictions from recent FLAPW calculations of...

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Veröffentlicht in:Journal of applied physics 1985-04, Vol.57 (8), p.3024-3026
Hauptverfasser: Prinz, G. A., Kisker, E., Hathaway, K. B., Schröder, K., Walker, K.-H.
Format: Artikel
Sprache:eng
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Zusammenfassung:The recent success in preparing single-crystal (110) films of metastable bcc-phase Co by molecular beam epitaxy on GaAs has permitted spin- and angle-resolved photoemission studies to be carried out on this material. These studies confirm the theoretical predictions from recent FLAPW calculations of the electronic band structure of bcc-Co and bcc-Fe. The two band structures are essentially the same, except that the Fermi level for Co is shifted relative to that of Fe due to the additional electron per atom. A significant portion of the increased minority electron density occurs in the Γ-Σ-N region of the Brillouin zone investigated here.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.335201