Time-Resolved Study of Thin Nickel Silicide Layer Growth at the Nickel Film/Si(100) Interface

Time-Resolved Study of Thin Nickel Silicide Layer Growth at the Nickel Film/Si(100) Interface

A time-resolved study of the initial stages of the formation of nickel silicide by pulsed incoherent light irradiation is described. Unreacted intermixed Ni--Si layer formation is shown to be an essential first step for silicide growth. The silicide layer energes from the Ni--Si mixed layer by a dis...

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Veröffentlicht in:Thin solid films 1987-12, Vol.164, p.481-486
Hauptverfasser: John, P K, Frolich, H, Rastogi, A C, Tong, B Y
Format: Artikel
Sprache:eng
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Zusammenfassung:A time-resolved study of the initial stages of the formation of nickel silicide by pulsed incoherent light irradiation is described. Unreacted intermixed Ni--Si layer formation is shown to be an essential first step for silicide growth. The silicide layer energes from the Ni--Si mixed layer by a disordered-to-crystalline transformation at a threshold Ni concentration corresponding to the crystalline silicide composition. 18 ref.--AA
ISSN:0040-6090