Transient Radiation Effects in AlGaAs/GaAs MODFETs

Transient Radiation Effects in AlGaAs/GaAs MODFETs

Transient radiation effects were measured in AlGaAs/GaAs MODFETs. The temperature dependence of the long-term transients was measured using 3 ns flash X-ray pulses allowing the observation of trapping levels. These long-term transients were similar to those observed in conventional GaAs FETs, with t...

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Veröffentlicht in:IEEE transactions on nuclear science 1987-12, Vol.34 (6), p.1669-1675
Hauptverfasser: Anderson, W. T., Simons, M., Tseng, W. F., Herb, J. A., Bandy, S.
Format: Artikel
Sprache:eng
Schlagworte:
Electrons
FETs
Gallium arsenide
HEMTs
MODFET circuits
MODFET integrated circuits
Photoconductivity
Pulse measurements
Radiation effects
Temperature dependence
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Zusammenfassung:Transient radiation effects were measured in AlGaAs/GaAs MODFETs. The temperature dependence of the long-term transients was measured using 3 ns flash X-ray pulses allowing the observation of trapping levels. These long-term transients were similar to those observed in conventional GaAs FETs, with the exception that persistent photoconductivity was observed in some devices.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1987.4337534