Array mode selection utilizing an external cavity configuration

Array mode selection utilizing an external cavity configuration

We report operation of a ten-stripe, gain-guided, phase-locked diode laser in an external cavity configuration. The laser radiates in a single narrow (1°) lobe. Such lasers generally lase in the highest order array mode, L=10, which radiates in a twin-lobe far-field pattern. With one antireflection-...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Appl. Phys. Lett.; (United States) 1985-07, Vol.47 (2), p.89-91
Hauptverfasser: YAELI, J, STREIFER, W, SCIFRES, D. R, CROSS, P. S, THORNTON, R. L, BURNHAM, R. D
Format: Artikel
Sprache:eng
Schlagworte:
AMPLIFICATION
ENGINEERING
Exact sciences and technology
FILTERS
Fundamental areas of phenomenology (including applications)
GAIN
LASER CAVITIES
LASERS
OPERATION
Optics
Physics
SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989)
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report operation of a ten-stripe, gain-guided, phase-locked diode laser in an external cavity configuration. The laser radiates in a single narrow (1°) lobe. Such lasers generally lase in the highest order array mode, L=10, which radiates in a twin-lobe far-field pattern. With one antireflection-coated facet and a slit spatial filter, the laser has been operated in the L=1, 2, 3 or 10 array modes. A theoretical explanation of the spatial filter function is included.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96261