Thermal stability of thin-film amorphous W-Ru, W-Re, and Ta-Ir alloys

The crystallization behavior of self-supporting thin-film amorphous W-Ru, W-Re, and Ta-Ir alloys has been studied with transmission electron microscopy. Crystallization temperatures have been observed which are much lower than the temperatures predicted by a semiempirical model: the highest observed...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	J. Appl. Phys.; (United States) 1987-02, Vol.61 (3), p.1212-1215
Hauptverfasser:	DENIER VAN DER GON, A. W, BARBOUR, J. C, DE REUS, R, SARIS, F. W
Format:	Artikel
Sprache:	eng
Schlagworte:	CHEMICAL COMPOSITION Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology CRYSTALLIZATION ELECTRON MICROSCOPY ELEMENTS ENTHALPY Equations of state, phase equilibria, and phase transitions Exact sciences and technology IRIDIUM MATERIALS SCIENCE METALS Metals, semimetals and alloys MICROSCOPY Phase diagrams and microstructures developed by solidification and solid-solid phase transformations PHASE TRANSFORMATIONS PHYSICAL PROPERTIES Physics PLATINUM METALS RHENIUM RUTHENIUM Specific materials Specific phase transitions STABILITY TANTALUM THERMODYNAMIC PROPERTIES THIN FILMS TRANSITION ELEMENTS 360102 > Metals & Alloys-- Structure & Phase Studies TRANSMISSION ELECTRON MICROSCOPY TUNGSTEN VERY HIGH TEMPERATURE
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The crystallization behavior of self-supporting thin-film amorphous W-Ru, W-Re, and Ta-Ir alloys has been studied with transmission electron microscopy. Crystallization temperatures have been observed which are much lower than the temperatures predicted by a semiempirical model: the highest observed temperatures are 775 °C for W-Ru and W-Re alloys, and 900 °C for the Ta-Ir alloys. All three systems show maximum thermal stability at a composition expected using enthalpy considerations.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.338171