Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform

We demonstrate flexible GaAs photodetector arrays that were hetero-epitaxially grown on a Si wafer for a new cost-effective and reliable wearable optoelectronics platform. A high crystalline quality GaAs layer was transferred onto a flexible foreign substrate and excellent retention of device perfor...

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Veröffentlicht in:	Optics express 2020-11, Vol.28 (24), p.36559-36567
Hauptverfasser:	Hong, Namgi, Chu, Rafael Jumar, Kang, Soo Seok, Ryu, Geunhwan, Han, Jae-Hoon, Yu, Ki Jun, Jung, Daehwan, Choi, Won Jun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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