Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform

We demonstrate flexible GaAs photodetector arrays that were hetero-epitaxially grown on a Si wafer for a new cost-effective and reliable wearable optoelectronics platform. A high crystalline quality GaAs layer was transferred onto a flexible foreign substrate and excellent retention of device perfor...

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Veröffentlicht in:Optics express 2020-11, Vol.28 (24), p.36559-36567
Hauptverfasser: Hong, Namgi, Chu, Rafael Jumar, Kang, Soo Seok, Ryu, Geunhwan, Han, Jae-Hoon, Yu, Ki Jun, Jung, Daehwan, Choi, Won Jun
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Sprache:eng
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Zusammenfassung:We demonstrate flexible GaAs photodetector arrays that were hetero-epitaxially grown on a Si wafer for a new cost-effective and reliable wearable optoelectronics platform. A high crystalline quality GaAs layer was transferred onto a flexible foreign substrate and excellent retention of device performance was demonstrated by measuring the optical responsivities and dark currents. Optical simulation proves that the metal stacks used for wafer bonding serve as a back-reflector and enhance GaAs photodetector responsivity via a resonant-cavity effect. Device durability was also tested by bending 1000 times and no performance degradation was observed. This work paves a way for a cost-effective and flexible III-V optoelectronics technology with high durability.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.410385