Properties of Au/oxide/InP metal-interfacial layer-semiconductor junctions

The properties of Au/thermal oxide/p-InP metal-interfacial layer-semiconductor (MIS) junctions have been investigated. Thin InP thermal oxides are stable and in the dark are positively charged so as to increase the band bending and reduce the forward leakage currents in MIS junctions. Under illumina...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1985-09, Vol.58 (5), p.1876-1885
Hauptverfasser:	EBERSPACHER, C, FAHRENBRUCH, A. L, BUBE, R. H
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties Applied sciences CHALCOGENIDES ELECTRICAL PROPERTIES ELECTRONIC STRUCTURE Electronics ELEMENTS EMISSION Exact sciences and technology GOLD HIGH TEMPERATURE HYSTERESIS INDIUM COMPOUNDS INDIUM OXIDES INDIUM PHOSPHIDES INTERFACES JUNCTIONS MATERIALS SCIENCE METALS OXIDES OXYGEN COMPOUNDS PHOSPHIDES PHOSPHORUS COMPOUNDS PHOSPHORUS OXIDES PHOTOELECTRIC EFFECT PHOTOELECTROMAGNETIC EFFECTS PHOTOEMISSION PHYSICAL PROPERTIES PNICTIDES SECONDARY EMISSION Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTOR JUNCTIONS TRANSITION ELEMENTS TRAPPING VERY HIGH TEMPERATURE
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